发布时间 : 星期三 文章对转双转子永磁同步电机电磁设计--MATLAB程序实现更新完毕开始阅读820a414a852458fb770b56e6
hj1=(D1-Di1)/2-(hi01+hi12+2*ri1/3+ro1-0.222/3); hj1i=hj1;hj1o=hj1;%公用的定子轭计算高度 ht1i=hi12+ri1/3;
ht1o=ro1-ho01;%内外定子齿计算高度 Lj1=pi*Dm/(4*p);%公用定子轭磁路计算长度 Vt1i=Qi*L1*KFe*ht1i*bt1i;
Vt1o=Qo*L1*KFe*ht1o*bt1o;%内外定子齿体积 Vj1=pi*L1*KFe*hj1*Dm;%公用的定子轭体积 hj2i= (D2i-Di2i)/2;
hj2o=(D2o-Di2o)/2;%转子轭计算高度 Lj2i=pi*(Di2i+hj2i)/4/pi;
Lj2o=pi*(Di2o+hj2o)/4/pi;%转子轭计算长度
%------------------绕组计算-------------------------------------- N=Ns*Q/2/m/a;%每相串联匝数 Asi=(2*ri1+bi1)*(hi12-h)/2+pi*ri1^2/2;
Aso=(1.36+bo1)*(ho12-h)/2+0.222*1.36/2;%内外槽面积 Aii=Ci*(2*hi12+pi*ri1);
Aio=Ci*(2*ho12+1.36);%内外绝缘层面积 Aefi=Asi-Aii;Aefo=Aso-Aio;%内外槽有效面积 Sfi=Ns*Nt1*(d11+hd1)^2/Aefi;
Sfo=Ns*Nt1*(d11+hd1)^2/Aefo;%内外槽满率 a1=2*p*pi/Q; Kp1=1;%短距因数
Kd1=sin(q*a1/2)/q/sin(a1/2);%分布因数 Ksk1=1;%斜槽因数
Kdp=Kd1*Kp1*Ksk1;Kdpi=Kdp;Kdpo=Kdp;%绕组因数 Lavi=L1+2*(d+LE1);
Lavo=L1+2*(d+LE1);%内外线圈平均半匝长
LEi=2*(d+LE1);LEo=2*(d+LE1);%内外线圈端部平均长 mCu=1.05*pi*rouCu*Q*Ns*(Lavi+Lavo)*Nt1*d11^2/4*1*1e-5; %定子导线质量
%------------------磁路计算----------------------------------------------------
aii=54.6/60;aio=52.3/60;%内外极弧系数 Kfi=4*sin(aii*pi/2)/pi;
Kfo=4*sin(aio*pi/2)/pi;%内外气隙磁密波形系数 Kfaii=8*sin(aii*pi/2)/aii/pi^2;
Kfaio=8*sin(aio*pi/2)/aio/pi^2;%内外气隙磁通波形系数 Kg1i=t1i*(4.4*gi+0.75*bi01)/(t1i*(4.4*gi+0.75*bi01)-bi01^2); Kg1o=t1o*(4.4*go+0.75*bo01)/(t1o*(4.4*go+0.75*bo01)-bo01^2); Kg2i=1;Kg2o=1;
Kgi=Kg1i*Kg2i;Kgo=Kg1o*Kg2o;%内外气隙系数 bm0i=0;bm0o=0;
while abs((bm01i-bm0i)/bm01i)>0.01|abs((bm01o-bm0o)/bm01o)>0.001 faig0i=bm01i*Br*Ami*1*1e-4/zata0i;
faig0o=bm01o*Br*Amo*1e-4/zata0o;%内外空载主磁通 Bgi=10000*faig0i/aii/tao1i/Lefi;
Bgo=10000*faig0o/aio/tao1o/Lefo;%内外气隙磁密 Fgi=2*Bgi*Kgi*gi*0.01/mu0;Fgqi=Fgi;
Fgo=2*Bgo*Kgo*go*0.01/mu0;Fgqo=Fgo;%内外交直轴气隙磁位差 Bt1i=Bgi*t1i*Lefi/bt1i/KFe/L1;
Bt1o=Bgo*t1o*Lefo/bt1o/KFe/L1;%内外定子齿磁密 Ht1i=interp1(Bcz,H,Bt1i,'spline'); Ht1o=interp1(Bcz,H,Bt1o,'spline');%插值
Ft1i=2*ht1i*Ht1i;Ft1o=2*ht1o*Ht1o;%内外定子齿磁位差 Bj1=(faig0i+faig0o)*1e4/2/L1/KFe/hj1; Bj1i=Bj1;Bj1o=Bj1;%定子轭部磁密 bzj1=hj1/tao1o;%定子 bzj2i=hj2i/tao1i;%内转子 bzj2o=hj2o/tao1o;%外转子 Hj1=interp1(Bcz,H,Bj1,'spline'); C1=interp2(Xj,Bjz,Cj1,bzj1,Bj1); Fj1=2*C1*Hj1*Lj1;%定子轭部磁位差 Bj2i=faig0i*1e4/2/L2/KFe/hj2i;
Bj2o=faig0o*1e4/2/L2/KFe/hj2o;%内外转子轭部磁位差 Hj2i=interp1(Bcz,H,Bj2i,'spline'); Hj2o=interp1(Bcz,H,Bj2o,'spline');%插值
C2i=interp2(Xj,Bjz,Cj2,bzj2i,Bj2i); C2o=interp2(Xj,Bjz,Cj2,bzj2o,Bj2o); Fj2i=2*Hj2i*C2i*Lj2i;
Fj2o=2*Hj2o*C2o*Lj2o;%内外转子轭部磁位差 sumFi=Fgi+Ft1i+Fj1+Fj2i;
sumFo=Fgo+Ft1o+Fj1+Fj2o;%每对极总磁位差 Ksti=(Fgqi+Ft1i)/Fgqi;
Ksto=(Fgqo+Ft1o)/Fgqo;%磁路齿饱和系数 Agi=faig0i/sumFi;
Ago=faig0o/sumFo;%主磁导 lemtgi=200*Agi*hMi/mur/mu0/Ami;
lemtgo=200*Ago*hMo/mur/mu0/Amo;%主磁导标幺值 lemtni=zata0i*lemtgi;
lemtno=zata0o*lemtgo;%外磁路总磁导标幺值 lemtzi=(zata0i-1)*lemtgi;
lemtzo=(zata0o-1)*lemtgo;%漏磁导标幺值 bm0i=lemtni/(lemtni+1);
bm0o=lemtno/(lemtno+1);%永磁体空载工作点 bm01i=(bm01i+bm0i)/2;
bm01o=(bm01o+bm0o)/2;%程序循环变量 end
Bg1i=Kfi*faig0i*1e4/aii/tao1i/Lefi;
Bg1o=Kfo*faig0o*1e4/aio/tao1o/Lefo;%气隙磁密基波幅值 E0i=4.44*f*Kdp*N*faig0i*Kfaii;
E0o=4.44*f*Kdp*N*faig0o*Kfaio;%空载反电动势
%-----------------参数计算----------------------------------------------------- R1=RouCu*2e-3*Lavi*N/(pi*a*Nt1*(d11^2/4));%定子直流电阻 Cxi=4*pi*f*mu0*Lefi*(Kdp*N)^2*0.01/p;
Cxo=4*pi*f*mu0*Lefo*(Kdp*N)^2*0.01/p;%漏抗系数
KU1i=1;KU1o=1;KL1i=1;KL1o=1;%内外槽的上下部节距漏抗系数 lemtU1i=hi01/bi01+2*his1/(bi01+bi1); lemtU1o=ho01/bo01+2*hos1/(bo01+bo1); rfai=bi1/bi2;rfao=bo1/bo2;
bt2i=hi2/bi2;bt2o=ho2/bo2;
Kr1i=1/3-(1-rfai)/4*(1/4+1/3/(1-rfai)+1/2/(1-rfai)^2+1/(1-rfai)^3+log(rfai)/(1-rfai)^4);
Kr1o=1/3-(1-rfao)/4*(1/4+1/3/(1-rfao)+1/2/(1-rfao)^2+1/(1-rfao)^3+log(rfao)/(1-rfao)^4);
Kr2i=(2*pi^2-9*pi)/1536/bt2i^2+pi/16/bt2i-pi/8/(1-rfai)/bt2i-(pi^2/64/(1-rfai)/bt2i^2+pi/8/(1-rfai)^2/bt2i)*log(rfai);
Kr2o=(2*pi^2-9*pi)/1536/bt2o^2+pi/16/bt2o-pi/8/(1-rfao)/bt2o-(pi^2/64/(1-rfao)/bt2o^2+pi/8/(1-rfao)^2/bt2o)*log(rfao);
lemtL1i=bt2i*(Kr1i+Kr2i)/(pi/8/bt2i+(1+rfai)/2)^2; lemtL1o=bt2o*(Kr1o+Kr2o)/(pi/8/bt2o+(1+rfao)/2)^2; lemts1i=KU1i*lemtU1i+KL1i*lemtL1i;
lemts1o=KU1o*lemtU1o+KL1o*lemtL1o;%定子槽比漏磁导 Xs1i=2*p*m*L1*lemts1i*Cxi/Lefi/Kdpi^2/Qi;
Xs1o=2*p*m*L1*lemts1o*Cxo/Lefo/Kdpo^2/Qo;%定子槽漏抗 sums=0.0156;%查表得
Xd1i=m*tao1i*sums*Cxi/pi^2/Kgi/gi/Kdpi^2/Ksti;
Xd1o=m*tao1o*sums*Cxo/pi^2/Kgo/gi/Kdpo^2/Ksto;%定子谐波漏抗 XE1i=0.2*(LEi/Lefi*Kdpi^2)*Cxi;
XE1o=0.2*(LEo/Lefo*Kdpo^2)*Cxo;%定子端部漏抗 X1i=Xs1i+Xd1i+XE1i;
X1o=Xs1o+Xd1i+XE1o;%定子漏抗
Kadi=1/Kfi;Kado=1/Kfo;%直轴电枢折算系数 Kaqi=Kadi;Kaqo=Kado;%交轴电枢磁动势折算系数 Idi=IN/2;Ido=IN/2;
Fadi=0.45*m*Kadi*Kdpi*N*Idi/p; Fado=0.45*m*Kado*Kdpo*N*Ido/p; fa1i=2*Fadi/zata0i/hMi/Hc/10; fa1o=2*Fado/zata0o/hMo/Hc/10; bmNi=lemtni*(1-fa1i)/(lemtni+1); bmNo=lemtno*(1-fa1o)/(lemtno+1);
faigNi=(bmNi-(1-bmNi)*lemtzi)*Ami*Br*1e-4; faigNo=(bmNo-(1-bmNo)*lemtzo)*Amo*Br*1e-4;
Edi=4.44*f*Kdpi*N*faigNi*Kfaii;Edo=4.44*f*Kdpo*N*faigNo*Kfaio;