发布时间 : 星期一 文章PN结的雪崩机理及应用分析更新完毕开始阅读faaff07eae45b307e87101f69e3143323868f576
PN结的雪崩机理及应用分析
摘 要
本文主要介绍了什么是半导体，半导体的特性，P型半导体和N型半导体，PN结的形成、导电性、击穿特性、电容效应和开关特性，PN结雪崩击穿特性的应用等。电子技术最基础的知识就是半导体，而半导体最基本的也是最重要的应用就是PN结。PN结是构成双极型晶体管和场效应晶体管的核心，是现代电子技术的基础，在二级管中广泛应用。雪崩光电二极管(APD)以其极高的灵敏度(增益)在光电子领域,尤其是在光通讯领域得到了广泛的应用。雪崩二极管是一种能产生微波振荡的负阻器件，被广泛用于脉冲和多普勒雷达、相控阵天线以及反射放大器中，作为本机振荡或参量放大器的泵浦源。此外，雪崩二极管具有和齐纳二极管相似的伏安特性曲线，在击穿状态时，电流在很宽的范围内变化时，二级管两端电压保持稳定。因此，雪崩二极管亦可用于稳压电源电路中。半导体的发展促进了科学技术的革命,特别是推动了计算机、通信、自动化的发展和太阳能的利用,作为一个重要的新兴学科,正处于非常有生命力的发展时期。随着对半导体技术研究的不断深入,PN结的应用范围会不断扩大。 关键词：半导体 PN结 雪崩机理 雪崩光电二极管
ABSTRACT
On the Analysis of Avalanche Mechanism and
Application of PN Junction
The thesis is mainly about semiconductor and its characteristics, P type and N type semiconductor, the formation of PN junction and its characteristics of conductivity, breakdown characteristics, the effect of capacity,and switching characteristics,and the application of the characteristics of PN junction avalanche breakdown and so on. The most basic knowledge of electronic technology is semiconductor of which the most basic and important application is PN junction. The PN junction is the core of the composition of both biposar transistor and field effect transistor.It is the basis of electronic technology, which is widely applied in Diode. Due to its high sensibility, Avalanche Photodiode(APD) is widely used in the phtotoelectron field, especially in the field of optical communication. Avalanche Diode, a negative resistance device can generate the microwave oscillator,is widely applied in pulse and Doppler radar,phased array antenna,reflection ampliffier as the pomp sourse of machine oscillation and parameter amplifier. Besides, Voltage at both ends of Avalanche Diode, which has a similar volt-ampere characteristics with Zener diode, will keep stable when electric current alters in a very wide range in the breakdown state. Therefore, Avalanche Diode can also be used in the stabilized power supply curcuit.As a new important subject, semiconductor is now experiencing a quite vigorous development as it promotes the technology revolution, especilly the development of computer, telecommunication, as well as the use of solar energy. With the deeper research on the technology of semiconductor,the application of PN junction will keep Enlarging.
Key words: semiconductor, PN junction, Avalanche mechanism, Avalanche Photodiode.
目 录
目 录
1 绪论 .............................................. 1
1.1研究背景 ........................................... 1 1.2 国内外研究现状 .................................... 1 1.3课题研究的目的及意义 ............................... 2 1.4论文内容安排 ....................................... 2
2 半导体物理基础 ..................................... 3
2.1什么是半导体 ....................................... 3 2.2半导体的特性 ....................................... 3 2.3本征半导体结构特点 ................................. 3 2.4 P型半导体和N型半导体 ............................. 4
3 PN结 .............................................. 6
3.1 PN结的形成 ........................................ 6 3.2 PN结的单向导电性 .................................. 6 3.3 PN结的电容效应 .................................... 7 3.3.1势垒电容 ...................................... 7 3.3.2扩散电容 ...................................... 7 3.4 PN结的开关特性 .................................... 7
4 PN结的雪崩击穿机理分析 ............................ 9
4.1 雪崩击穿条件 ...................................... 9 4.2雪崩击穿的临界电场强度 ............................ 10